139 tm ha-5135/883 precision operational amplifier description the ha-5135/883 is a precision operational amplifier manu- factured using a combination of key technological advance- ments to provide outstanding input characteristics. a high beta input stage is combined with laser trimming, dielectric isolation, and matching techniques to produce 75 v (max) input offset voltage and 0.4 v/ o c (max) input offset voltage average drift. other features enhanced by this process include 9nv/ hz (typ) input noise voltage, 4na input bias current (max) and 120db open loop gain (min). these features coupled with 106db cmrr and 94db psrr make ha-5135/883 an ideal device for precision d.c. instru- mentation amplifiers. excellent input characteristics in con- junction with 0.6mhz (min) bandwidth and 0.5v/ s (min) slew rate, makes this amplifier extremely useful for precision integrator and biomedical amplifier designs. these amplifi- ers are also well suited for precision data acquisition and for accurate threshold detector applications. ordering information part number temperature range package ha2-5135/883 -55 o c to +125 o c8 pin can ha7-5135/883 -55 o c to +125 o c 8 lead cerdip ha4-5135/883 -55 o c to +125 o c 20 lead ceramic lcc features ? this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. ? low offset drift . . . . . . . . . . . . . . . . . . . 0.4 v/ o c (max) ? low offset voltage . . . . . . . . . . . . . . . . . . . .75 v (max) ? high gain . . . . . . . . . . . . . . . . . . . . 120db(1mv/v) (min) ? high cmrr . . . . . . . . . . . . . . . . . . . . . . . . . . 106db (min) ? high psrr . . . . . . . . . . . . . . . . . . . . . . . . . . . 94db (min) ? low supply current. . . . . . . . . . . . . . . . . . 1.7ma (max) ? low noise voltage density at 1khz . . . . . 9nv/ hz (max) ? low noise current density at 1khz . . . . 0.4pa/ hz (max) applications ? high gain instrumentation ? precision data acquisition ? precision integrators ? biomedical amplifiers ? precision threshold detectors july 1994 spec number 511016-883 fn3731.1 pinouts ha-5135/883 (cerdip) top view ha-5135/883 (clcc) top view ha-5135/883 (metal can) top view 1 2 3 4 8 7 6 5 v+ out bal 2 v- + bal1 bal1 -in +in - 4 5 6 7 8 9101112 13 3212019 15 14 18 17 16 bal2 nc v- nc nc nc nc nc v+ out nc nc nc nc bal1 nc nc + -in +in bal1 - 2 4 6 1 3 7 5 8 out v- (case) bal 2 v+ bal1 + bal1 -in +in -
140 specifications ha-5135/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . 40v differential input voltage (note 2) . . . . . . . . . . . . . . . . . . . . . . . . 7v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ma output current . . . . . . . . . . . . . . . . . . . .full short circuit protection junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s). . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc cerdip package . . . . . . . . . . . . . . . . . . . 115 o c/w 28 o c/w ceramic lcc package . . . . . . . . . . . . . . 65 o c/w 15 o c/w metal can package . . . . . . . . . . . . . . . . . 155 o c/w 67 o c/w package power dissipation limit at +75 o c for t j +175 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mw ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54w metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mw package power dissipation derating factor above +75 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mw/ o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mw/ o c metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mw/ o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not i mplied. operating conditions operating temperature range. . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 600 ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 5 0? , r load = 100k ? , v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max input offset voltage v io v cm = 0v 1 +25 o c-7575 v 2, 3 +125 o c, -55 o c -130 130 v input bias current i b v cm = 0v, r s = 10k ? , 5 0? 1+25 o c-44na 2, 3 +125 o c, -55 o c-6 6 na input offset current i io v cm = 0v, +r s = 10k ? , -r s = 10k ? 1+25 o c-44na 2, 3 +125 o c, -55 o c-5.55.5 na common mode range +cmr v+ = +3v, v- = -27v 1+25 o c12-v 2, 3 +125 o c, -55 o c12 - v -cmr v+ = +27v, v- = -3v 1+25 o c--12v 2, 3 +125 o c, -55 o c--12v large signal voltage gain +a vol v out = 0v and +10v, r l = 2k ? 4+25 o c120-kv/v 5, 6 +125 o c, -55 o c120 - kv/v -a vol v out = 0v and -10v, r l = 2k ? 4+25 o c120-kv/v 5, 6 +125 o c, -55 o c120 - kv/v common mode rejection ratio +cmrr ? v cm = +10v , v+ = +5v, v- = -25v, v out = -10v 1+25 o c106-db 2, 3 +125 o c, -55 o c106 - db -cmrr ? v cm = -10v , v+ = +25v, v- = -5v, v out = +10v 1+25 o c106-db 2, 3 +125 o c, -55 o c106 - db output voltage swing +v out r l = 600 ? 4+25 o c10-v 5, 6 +125 o c, -55 o c10 - v -v out r l = 600 ? 4+25 o c--10v 5, 6 +125 o c, -55 o c--10v output current +i out v out = -10v 4 +25 o c15-ma -i out v out = +10v 4 +25 o c--15ma +i b i ? b + 2 ---------------------------- - ?? ?? spec number 511016-883
141 spec number 511016-883 specifications ha-5135/883 quiescent power supply current +i cc v out = 0v, i out = 0ma 1+25 o c-1.7ma 2, 3 +125 o c, -55 o c-1.7ma -i cc v out = 0v, i out = 0ma 1+25 o c-1.7-ma 2, 3 +125 o c, -55 o c-1.7 - ma power supply rejection ratio +psrr ? v sup = 10v, v+ = +5v, v- = -15v, v+ = +15v, v- = -15v 1+25 o c94-db 2, 3 +125 o c, -55 o c94 - db -psrr ? v sup = 10v, v+ = +15v, v- = -5v, v+ = +15v, v- = -15v 1+25 o c94-db 2, 3 +125 o c, -55 o c94 - db offset voltage adjustment +v io adj note 1 1 +25 o cv io -1 - mv 2, 3 +125 o c, -55 o cv io -1 - mv -v io adj note 1 1 +25 o cv io +1 - mv 2, 3 +125 o c, -55 o cv io +1 - mv notes: 1. offset adjustment range is [v io (measured 1mv] minimum referred to output. this test is for functionality only to assure adjustment through 0v. 2. the input stage has series 500 ? resistors along with back to back diodes. this provides large differential input voltage protection for a slight increase in noise voltage. table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 50 ? , r load = 2k ? , c load = 50pf, a vcl = +1v/v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max slew rate +sr v out = -3v to +3v, v in s.r. 25v/ s 7+25 o c0.5-v/ s -sr v out = +3v to -3v, v in s.r. 25v/ s 7+25 o c0.5-v/ s table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 2k ? , c load = 50pf, a v = +1v/v, unless otherwise specified. parameters symbol conditions notes temperature limits units min max average offset voltage drift v io tc v cm = 0v 1 -55 o c to +125 o c- 1.3 v/ o c differential input resistance r in v cm = 0v 1 +25 o c20-m ? average offset current drift i io tc versus temperature v cm = 0v 1-55 o c to +125 o c- 40pa / o c average bias current drift i b tc versus temperature v cm = 0v 1-55 o c to +125 o c- 40pa / o c input noise voltage density e n r s = 20 ? , f o = 1khz 1 +25 o c-11nv / hz table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 5 0? , r load = 100k ? , v out = 0v, unless otherwise specified. parameters symbol conditions group a subgroups temperature limits units min max
142 spec number 511016-883 specifications ha-5135/883 input noise current density i n r s = 2m ? , f o = 1khz 1 +25 o c-0.4pa / hz unity gain bandwidth ugbw v out = 100mv, f o at -3db 1+25 o c600-khz full power bandwidth fpbw v peak = 10v 1, 2 +25 o c8-khz minimum closed loop stable gain clsg r l = 2k ? , c l = 50pf 1 -55 o c to +125 o c + 1-v/v output resistance r out open loop 1 +25 o c-80 ? power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c- 51 mw notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at final production. these pa- rameters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characte riza- tion based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. power consumption based upon quiescent supply current test maximum. (no load on outputs.) table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7 group a test requirements 1, 2, 3, 4, 5, 6, 7 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only. table 3. electrical performance characteristics (continued) device characterized at: v supply = 15v, r load = 2k ? , c load = 50pf, a v = +1v/v, unless otherwise specified. parameters symbol conditions notes temperature limits units min max
143 all intersil u.s. products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com ha-5135/883 die characteristics die dimensions: 72 x 103 x 19 mils 1 mils 1840 x 2620 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 6.0 x 10 4 a/cm 2 substrate potential (powered up): v- transistor count: 71 process: bipolar dielectric isolation metallization mask layout ha-5135/883 bal1 v+ out bal1 v- +in -in bal2 spec number 511016-883
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